Wenxiang Mu
Associate Professor
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Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction
  • Affiliation of Author(s):
    微电子学院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    王珣珣
  • Document Code:
    94A89A91EBFE4CEA8315878F2988EA0A
  • Volume:
    43
  • Issue:
    1
  • Page Number:
    44
  • Number of Words:
    4500
  • Translation or Not:
    no
  • Date of Publication:
    2022-01-01

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