Wenxiang Mu
Associate Professor
Visit:次
Paper Publications
Home
Pt/ZnGa<sub>2</sub>O<sub>4</sub> Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa<sub>2</sub>O<sub>4</sub> (111) Substrates
  • Affiliation of Author(s):
    新一代半导体材料研究院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    Liu, Jinyang
  • Document Code:
    1601022276746350593
  • Volume:
    43
  • Issue:
    12
  • Page Number:
    2061-2064
  • Number of Words:
    4000
  • Translation or Not:
    no
  • Date of Publication:
    2022-01-01

Pre One:High-performance solar-blind photodetector based on Si-doped α-Ga2O3 thin films grown by Mist Chemical Vapor Deposition

Next One:4英寸氧化镓单晶生长与性能

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University