Wenxiang Mu
Associate Professor
Visit:次
Paper Publications
Home
Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer
  • Affiliation of Author(s):
    新一代半导体材料研究院
  • Journal:
    Crystals
  • Key Words:
    Ga2O3;field-effect transistors;enhancement-mode;enhancement？mode;field？effect transistors;Ga2 O3;local thinning
  • First Author:
    葛磊
  • Document Code:
    1557660919891394562
  • Volume:
    12
  • Issue:
    7
  • Number of Words:
    5
  • Translation or Not:
    no
  • Date of Publication:
    2022-07-01

Pre One:Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (100) surface

Next One:Synthesis, mechanism and characterization of urchin-like Ga2O3 microspheres

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University