Wenxiang Mu
Associate Professor
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4英寸氧化镓单晶生长与性能
  • Affiliation of Author(s):
    新一代半导体材料研究院
  • Journal:
    《人工晶体学报》
  • First Author:
    穆文祥
  • Document Code:
    1575306206225580033
  • Volume:
    51
  • Issue:
    Z1
  • Page Number:
    1-5
  • Translation or Not:
    no
  • Date of Publication:
    2022-08-31

Pre One:Pt/ZnGa<sub>2</sub>O<sub>4</sub> Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa<sub>2</sub>O<sub>4</sub> (111) Substrates

Next One:Growth and characterization of the β-Ga<sub>2</sub>O<sub>3</sub> (011) plane without line-shaped defects

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