Wenxiang Mu
Associate Professor
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Growth and characterization of the β-Ga2O3 (011) plane without line-shaped defects
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Growth and characterization of the β-Ga2O3 (011) plane without line-shaped defects
  • Journal:
    CRYSTENGCOMM
  • First Author:
    陈伯阳
  • Document Code:
    CBDF2C5247024888BA6BB911AD10A4DB
  • Issue:
    25
  • Number of Words:
    5
  • Translation or Not:
    No
  • Date of Publication:
    2023-02
  • Release Time:
    2023-05-18
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