Wenxiang Mu
Associate Professor
Visit:次
Paper Publications
Home
Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction
  • Affiliation of Author(s):
    集成电路学院
  • Journal:
    IEEE Electron Device Letters
  • Key Words:
    Alumina;Aluminum oxide;Field effect transistors;Gallium compounds;Heterojunctions;II-VI semiconductors;Nanosheets;Semiconducting indium compounds;Zinc oxide;Back channels;Filed-effect-transistor;Gallium oxide (ga2o3);High mobility;Mobility (μ);Mode operation;Nano sheet;P-n heterojunctions;p-Type SnO;Threshold voltage (VTH);Gallium oxide (Ga2O3);filed-effecttransistors (FETs);heterojunction;threshold voltage (V-TH);p-type SnO;mobility (mu)
  • First Author:
    王珣珣
  • Document Code:
    1478204783637565441
  • Volume:
    43
  • Issue:
    1
  • Page Number:
    44-47
  • Number of Words:
    5
  • Translation or Not:
    no
  • Date of Publication:
    2022-01-01

Pre One:Efficient Suppression of Persistent Photoconductivity in β-Ga2O3-Based Photodetectors with Square Nanopore Arrays

Next One:Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by Mist-CVD method

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University