Wenxiang Mu
Associate Professor
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Growth and characterization of the β-Ga<sub>2</sub>O<sub>3</sub> (011) plane without line-shaped defects
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Title of Paper:
    Growth and characterization of the β-Ga<sub>2</sub>O<sub>3</sub> (011) plane without line-shaped defects
  • Journal:
    CRYSTENGCOMM
  • First Author:
    Chen, Boyang
  • Document Code:
    F4E5D751A519435F9C5258F2A44C5903
  • Volume:
    25
  • Issue:
    16
  • Page Number:
    2404
  • Number of Words:
    5000
  • Translation or Not:
    No
  • Date of Publication:
    2023-04
  • Release Time:
    2024-10-15
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