Wenxiang Mu
Associate Professor
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Growth and characterization of a 2-inch (102) plane β-Ga2O3 crystal via the edge-defined film-fed growth method
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Growth and characterization of a 2-inch (102) plane β-Ga2O3 crystal via the edge-defined film-fed growth method
  • Journal:
    CrystalEngComm
  • First Author:
    张晋
  • Document Code:
    1915344281486123009
  • Number of Words:
    4000
  • Translation or Not:
    No
  • Date of Publication:
    2025-03
  • Release Time:
    2025-09-13
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