Wenxiang Mu
Associate Professor
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Suppression of Screw Dislocation-Induced Hillocks in MOCVD-Grown α-Ga2O3 on m-Plane Sapphire by Introducing a High-Temperature Buffer
  • Institution:
    新一代半导体材料研究院
  • Title of Paper:
    Suppression of Screw Dislocation-Induced Hillocks in MOCVD-Grown α-Ga2O3 on m-Plane Sapphire by Introducing a High-Temperature Buffer
  • Journal:
    CRYSTAL GROWTH & DESIGN
  • First Author:
    李竹程
  • Document Code:
    1897579751978758146
  • Number of Words:
    4000
  • Translation or Not:
    No
  • Date of Publication:
    2025-02
  • Release Time:
    2025-09-13
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