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    Revelation of the dislocations in the C face of 4HSiC substrates using a microwave plasma etching treatment

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Revelation of the dislocations in the C face of 4HSiC substrates using a microwave plasma etching treatment

    • Journal:CRYSTENGCOMM

    • First Author:彭燕

    • Document Code:FE028CCECC824D29AC9F02E107A1EB6E

    • Issue:23

    • Page Number:353

    • Number of Words:3000

    • Translation or Not:No

    • Date of Publication:2020-10

    • Release Time:2022-10-29
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