主要论文

1. Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics. Nature Communications, 2022, 13(1): 7432. 第一作者 IF: 17.7

2. Low Power Memristor for Neuromorphic Computing: From Materials to Applications. Nano Micro Letters, 2025, Accepted 通讯作者 IF:31.6

3. Innovative Ultralow Thermal Budget ZrHfOx Ferroelectric Films with Low-Temperature Phase Transition for Next-Generation High-Speed Multifunctional Devices. Nano Letters, 2025, 25 (1), 157-165 通讯作者 IF: 12.3

4. Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals. Advanced Science, 2025, 12, 2410765. 通讯作者 IF: 17.5

5. 3D Trench Hf_0.5Zr_0.5O₂ -Based 32 Kbit 1T1C FeRAM Chip with 2/5 ns Write/Read Speed, Low Power Consumption (0.605 pJ/bit) and Prominent High-Temperature Reliability (Baking @ 175°C). IEDM Dec. 2024, pp. 1-4. San Francisco, US.集成电路器件顶会

6. Novel Two-Terminal Synapse/Neuron Based on Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing. Nano Letters, 2024, 24(36): 11170-11178. 通讯作者 IF: 12.3

7. Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications. Applied Physics Reviews, 2024, 11(2). 通讯作者 IF: 19.5

8. 3D Nano Hafnium-Based Ferroelectric Memory Vertical Array for High-Density and High-Reliability Logic-In-Memory Application.  Advanced Electronic Materials, 2024, 2400438. 通讯作者 

9. Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications. Materials Horizons, 2024, 11(2): 490-498.  通讯作者 IF: 15.7

10. La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application. IEEE Transactions on Electron Devices, 2024, 71(9), 5375-5379. 通讯作者

11. Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO 2 Intercalation Layer in La:HfO 2 Thin Films. ACS Applied Electronic Materials. 2024 通讯作者

12. The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices. Nano Letters, 2023, 23(10): 4675-4682. 通讯作者 IF: 12.3

13.  Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing. Materials Horizons, 2023, 10(9): 3643-3650.  通讯作者 IF: 15.7

14. Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer. Advanced Electronic Materials, 2023, 9(8): 2300208. 通讯作者 

15. Ultralow Power Wearable Organic Ferroelectric Device for Optoelectronic Neuromorphic Computing. Nano Letters, 2022, 22(15), 6435- 6443.  通讯作者 IF: 12.3

16. Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation. 2020, 7, 1903480. Advanced Science. (封面文章) 第一作者 IF:17.5

17. Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application. Nano Letters. 2020, 20(6), 4111- 4120. (封面文章) 第一作者 IF: 12.3

18. Robust DNA‐Bridged Memristor for Textile Chips. Angew. Chem. Int. Ed. 2020, 59, 1- 8. （编辑高亮论文）共一作者 IF:16.8

19. Reconfigurable optoelectronic memristor for in-sensor computing applications. Nano Energy, 2021, 89: 106291.  第一作者 IF:19.1

20. Flexible 3D Memristor Array for Binary Storage and Multi-states Neuromorphic Computing Applications. InfoMat. 2021, 3(2): 212-221. 共一作者 IF:25.4

21. CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications. Materials Horizons, 2021, 8(12): 3345-3355.  通讯作者 IF: 15.7

22. Fully transparent, flexible and waterproof synapses with pattern recognition in organic environments. Nanoscale Horizons，2019, 4(6), 1293-1301. （封面论文）第一作者 IF:11.7

23. Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates. Nano Research, 2021: 1-8. 共一作者  IF:10.3  

24. Forming-free Flexible Memristor with Multilevel Storage for Neuromorphic Computing by Full PVD Technique. Journal of Materials Science & Technology.  2020,60,21-26. 共一作者 IF:10.3  

25. Flexible electronic synapses for face recognition application with multimodulated conductance states. ACS Applied Materials & Interfaces. 2018, 10(43): 37345-37352. 第一作者  IF:10.4   

26. Ferroelectric Hafnium Oxide Films for In-Memory Computing Applications. Advanced Electronic Materials, 2022: 2200951. 通讯作者

27. Room-Temperature Developed Flexible Biomemristor with Ultralow Switching Voltage for Array Learning. Nanoscale. 2020,12(16),9116-9123. 共一作者

28. Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity. Nanoscale research letters. 2019,14(1),102.  第一作者

29. Effect of doping concentration on intrinsic ferroelectric properties of HfLaO-based ferroelectric memory. IEEE Electron Device Letters, 2024. Accepted 通讯作者

30. CMOS compatible low power consumption ferroelectric synapse for neuromorphic computing. IEEE Electron Device Letters, 2023, 44(3): 532-535. 通讯作者

31. Stabilizing the ferroelectric phase in HfAlO ferroelectric tunnel junction with different bottom electrodes. IEEE Electron Device Letters, 2023,44(6):947-950. 通讯作者

32. Improved Ferroelectricity and tunnelling electro resistance in Zr-Rich HfxZr1-xO2 ferroelectric tunnel junction. IEEE Electron Device Letters, 2023, 44(2):245-248. 通讯作者

33. Ferroelectric and Antiferroelectric Phenomenon in Lanthanum doped Hafnium based Thin Films. IEEE Electron Device Letters, 2023, 44(9):1472-1475.通讯作者

34. Hafnium-Based Ferroelectric Memory Device With Integrated Selective Function Using Crested Band Structure. IEEE Transactions on Electron Devices, 2023,70(10):5113-5118. 通讯作者

35. Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations. IEEE Transactions on Electron Devices, 2023, 70(10):5107-5112. 通讯作者

36. Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films. IEEE Electron Device Letters, 2022, 44(1): 56-59. 通讯作者

37. Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing. IEEE Electron Device Letters. 2022, 43(7)，1089-1092.  通讯作者

38. Artificial Vision Adaptation Based on Optoelectronic Neuromorphic Transistors. IEEE Electron Device Letters. 2022, 43(11), 1917-1920.  通讯作者

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