王守志
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Progress in GaN Single Crystals: HVPE Growth and Doping
  • Affiliation of Author(s):
    晶体材料研究院
  • Journal:
    Journal of Inorganic Materials
  • First Author:
    齐占国
  • Document Code:
    424BCBC1F1174F7A985E8AF54F822BF2
  • Volume:
    38
  • Issue:
    3
  • Page Number:
    243
  • Number of Words:
    6000
  • Translation or Not:
    no
  • Date of Publication:
    2023-03-20

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