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Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film:？ Re-wakeup Phenomenon and Underlying Mechanisms

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Affiliation of Author(s):信息科学与工程学院
First Author:李晓鹏
Document Code:510F02E0DEAF4385B34576B2C15395DE
Number of Words:3
Translation or Not:no
Date of Publication:2022-12-03
Date of Publication:2022-12-03

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