中文

Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications

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  • Affiliation of Author(s):信息科学与工程学院

  • Journal:ACS Applied Nano Materials

  • First Author:桑鹏鹏

  • Document Code:98A7783704B24AECA5CB7344B3FD7C76

  • Volume:6

  • Issue:8

  • Page Number:6849

  • Number of Words:5

  • Translation or Not:no

  • Date of Publication:2023-04-07

  • Date of Publication:2023-04-07

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