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In-Depth Investigation of Seed Layer Engineering in Ferroelectric Hf0.5Zr0.5O2 Film: Wakeup-Free Achievement and Reliability Mechanisms

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Institution:信息科学与工程学院
Title of Paper:In-Depth Investigation of Seed Layer Engineering in Ferroelectric Hf0.5Zr0.5O2 Film: Wakeup-Free Achievement and Reliability Mechanisms
Journal:IEEE Transactions on Electron Devices
First Author:李晓鹏
Document Code:1747173381959147522
Number of Words:3
Translation or Not:No
Date of Publication:2024-02
Release Time:2025-10-02

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