Silicon Atomic-Layer Doped Hf $_{\text{0.7}}$ Zr $_{\text{0.3}}$ O $_{\text{2}}$ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance ( ${>}\text{10}^{\text{12}}$ Cycles)

Institution:信息科学与工程学院

Title of Paper:Silicon Atomic-Layer Doped Hf $_{\text{0.7}}$ Zr $_{\text{0.3}}$ O $_{\text{2}}$ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance ( ${>}\text{10}^{\text{12}}$ Cycles)

Journal:IEEE Transactions on Electron Devices

First Author:台路

Document Code:1806576807300517889

Page Number:1-4

Number of Words:3

Translation or Not:No

Date of Publication:2024-01

Release Time:2025-10-02