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GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric
Affiliation of Author(s):集成电路学院
Journal:Semiconductor Science and Technology
All the Authors:Yiming Wang,xinqian,xumingsheng,chenxiufang,xuxiangang,Feng Xianjin,Song A M
First Author:朱庚昌
Document Code:600382F594C94DF2908CDF75E37699EF
Volume:33
Issue:9
Translation or Not:no
Date of Publication:2018-09-01