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Institution:集成电路学院
Title of Paper:Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte
Journal:IEEE Electron Device Letters
First Author:杜路路
All the Authors:徐明升,王卿璞,辛倩,Song A M
Document Code:E30636329F7F4201AB68DFD2CE8AC89E
Volume:39
Issue:9
Page Number:1334
Number of Words:4
Translation or Not:No
Date of Publication:2018-08
Release Time:2019-10-25