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Institution:集成电路学院
Title of Paper:Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric
Journal:APPLIED PHYSICS LETTERS
First Author:马鹏飞
All the Authors:辛倩,Li Yuxiang,Song A M
Document Code:BCE60C230EC744E29AE7416AA84BAF14
Volume:113
Issue:6
Translation or Not:No
Date of Publication:2018-08
Release Time:2019-10-25