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Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric
Affiliation of Author(s):微电子学院
Journal:Applied physics letters
All the Authors:xinqian,Li Yuxiang,Song A M
First Author:马鹏飞
Indexed by:Applied Research
Document Code:BCE60C230EC744E29AE7416AA84BAF14
Volume:113
Issue:6
Translation or Not:no
Date of Publication:2018-08-06