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Institution:集成电路学院
Title of Paper:Schottky-barrier thin-film transistors based on HfO2-capped InSe
Journal:APPLIED PHYSICS LETTERS
First Author:辛倩
All the Authors:Song A M,王一鸣,Shi Yanpeng,Yifei Philip Zhang,辛倩
Document Code:7B2AFA27B7F54882ACFDC3B4111227BF
Volume:115
Issue:1
Number of Words:4500
Translation or Not:No
Date of Publication:2019-07
Release Time:2019-10-25