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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

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Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
Date of Publication:2020-07-01 Hits:

Affiliation of Author(s):集成电路学院
Journal:JOURNAL OF LUMINESCENCE Journal
First Author:时凯居
Document Code:E69B56299AC14B35A72BF74A6AC8870C
Volume:223
Number of Words:3
Translation or Not:no
Date of Publication:2020-07-01
Date of Publication:2020-07-01

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