Release Time:2021-06-02 |
Hits:
徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
Institution:集成电路学院
Title of Paper:Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
Journal:JOURNAL OF LUMINESCENCE Journal
First Author:时凯居
Document Code:E69B56299AC14B35A72BF74A6AC8870C
Volume:223
Number of Words:3
Translation or Not:No
Date of Publication:2020-07