山东大学教师主页徐明升 Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction Home

Personal Information

MORE+

Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

中文

徐明升

Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

Current position: Home / Scientific Research / Paper Publications

Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate

Release Time:2021-06-02 | Hits:

Institution:集成电路学院

Title of Paper:Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate

Journal:Scientific Reports

First Author:李长富

Document Code:34BFCCC1B4584A8EB05F63E49290BA3D

Volume:10

Issue:1

Number of Words:4

Translation or Not:No

Date of Publication:2020-01

Prev One:"Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation

Next One:Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction

Home

Scientific Research

Teaching Research

Awards and Honours

Enrollment Information

Student Information

My Album

Blog

Personal Information

Recommended Ph.D.Supervisor

Recommended MA Supervisor

徐明升

Paper Publications