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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

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Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer
Date of Publication:2022-02-01 Hits:

Affiliation of Author(s):集成电路学院
Journal:Chinese Physics B
First Author:屈尚达
Document Code:333F81675FA34B79AE8DCAAE2CC9909C
Issue:5
Number of Words:4555
Translation or Not:no
Date of Publication:2022-02-01
Date of Publication:2022-02-01

Pre One:Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures

Next One:Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*

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