Release Time:2022-05-26 |
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徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures
Institution:集成电路学院
Title of Paper:Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures
Journal:Superlattices Microstruct
First Author:冀子武
Document Code:BA326152AA4D486A8568882C2CB086D6
Issue:2
Number of Words:4850
Translation or Not:No
Date of Publication:2022-03