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Degree:Doctor
Status:Employed
School/Department:School of Microelectronics

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

Current position: Home / Scientific Research / Paper Publications
Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures
Date of Publication:2022-03-28 Hits:

Affiliation of Author(s):微电子学院
Journal:Superlattices Microstruct
First Author:冀子武
Document Code:BA326152AA4D486A8568882C2CB086D6
Issue:2
Number of Words:4850
Translation or Not:no
Date of Publication:2022-03-28
Date of Publication:2022-03-28

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