Release Time:2022-11-02 |
Hits:
徐明升
+
Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Institution:新一代半导体材料研究院
Title of Paper:Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Journal:MATERIALS TODAY COMMUNICATIONS
First Author:王希玮
Document Code:32143576C2254570B520E462205E4DBE
Issue:31
Number of Words:6
Translation or Not:No
Date of Publication:2022-04