Release Time:2022-10-29 |
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徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Institution:新一代半导体材料研究院
Title of Paper:Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Journal:MATERIALS TODAY COMMUNICATIONS
First Author:胡秀飞
Document Code:8E5E1D1B1C7E4C2796CD135BF3F1E39B
Issue:31
Translation or Not:No
Date of Publication:2022-04