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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

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Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
Date of Publication:2024-04-01 Hits:

Affiliation of Author(s):新一代半导体材料研究院
Journal:Journal of Physics and Chemistry of Solids
First Author:罗鑫
Document Code:1747462737015623682
Volume:187
Number of Words:4000
Translation or Not:no
Date of Publication:2024-04-01
Date of Publication:2024-04-01

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