Release Time:2024-05-17 |
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徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
Institution:新一代半导体材料研究院
Title of Paper:Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
Journal:Journal of Physics and Chemistry of Solids
First Author:罗鑫
Document Code:1747462737015623682
Volume:187
Number of Words:4000
Translation or Not:No
Date of Publication:2024-04