Release Time:2024-05-17 |
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徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing
Institution:新一代半导体材料研究院
Title of Paper:Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing
Journal:Solid-State Electronics
First Author:陈思衡
Document Code:1754450306790084609
Volume:213
Number of Words:4000
Translation or Not:No
Date of Publication:2024-03