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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

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Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination
Date of Publication:2025-05-13 Hits:

Affiliation of Author(s):新一代半导体材料研究院
Journal:MICROELECTRONICS JOURNAL
First Author:王新宇
Document Code:B553EB6CF2E14F2F938DCAF7AB87DCE3
Issue:161
Page Number:106732
Number of Words:5000
Translation or Not:no
Date of Publication:2025-05-13
Date of Publication:2025-05-13

Pre One:Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature

Next One:The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices

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