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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

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Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature
Date of Publication:2025-01-16 Hits:

Affiliation of Author(s):新一代半导体材料研究院
First Author:王天露
Document Code:1897581192143368193
Page Number:179-183
Number of Words:3
Translation or Not:no
Date of Publication:2025-01-16
Date of Publication:2025-01-16

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