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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

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Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Release Time:2025-05-24 | Hits:

Institution:新一代半导体材料研究院

Title of Paper:Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode

Journal:Results in Physics

First Author:Wang, Xinyu

Document Code:36B4649A237D476EA6CEB102D291C92E

Issue:62 (2024) 107799

Page Number:1

Number of Words:5000

Translation or Not:No

Date of Publication:2024-07

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