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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

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一种高准直性的紫外防污装置及其制备方法
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Affilication of Author(s):微电子学院
Type of Patent:发明
Application Number:201921707068.8
Number of Inventors:4
Service Invention or Not:no
Publication Date:2020-07-07
Authorization Date:2020-07-07
Publication Date: 2020-07-07
Authorization Date: 2020-07-07

Pre One:一种InGaN/GaN多量子阱基红光LED结构的制备方法

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