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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Patents

Current position: Home / Scientific Research / Patents
一种InGaN/GaN多量子阱基红光LED结构的制备方法
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Affilication of Author(s):集成电路学院
Type of Patent:发明
Application Number:202010806206.9
Number of Inventors:3
Service Invention or Not:no
Application Date:2020-08-12
Publication Date:2024-03-26
Authorization Date:2024-03-26
Application Date: 2020-08-12
Publication Date: 2024-03-26
Authorization Date: 2024-03-26