山东大学教师主页徐明升一种高性能GaN MIS-HEMT的制备方法 Home

Personal Information

Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Current position: Home / Scientific Research / Patents

一种InGaN/GaN多量子阱基红光LED结构的制备方法

Release Time:2024-04-02 | Hits:

Institution:集成电路学院

Type of Patent:Invent

Application Number:202010806206.9

Number of Inventors:3

Service Invention or Not:No

Application Date:2020-08-12

Publication Date:2024-03-26

Authorization Date:2024-03-26