山东大学教师主页徐明升一种高性能GaN MIS-HEMT的制备方法 Home

Personal Information

Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Current position: Home / Scientific Research / Patents

一种确定GaN晶体管纳米尺寸栅长二维电子气面密度的方法

Release Time:2024-05-18 | Hits:

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202310430551.0

Number of Inventors:8

Service Invention or Not:No

Application Date:2023-04-18

Publication Date:2024-01-30

Authorization Date:2024-01-30