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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Patents

Current position: Home / Scientific Research / Patents
测量SiC MOSFET沟道近界面陷阱密度的方法
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Affilication of Author(s):新一代半导体材料研究院
Type of Patent:发明
Application Number:202411603552.1
Number of Inventors:5
Service Invention or Not:no
Application Date:2024-11-12
Publication Date:2025-03-07
Authorization Date:2025-03-07
Application Date: 2024-11-12
Publication Date: 2025-03-07
Authorization Date: 2025-03-07