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Personal Information

Degree:Doctor
School/Department:School of Intergrate Circuit

Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Current position: Home / Scientific Research / Patents

一种SiC器件欧姆接触及其制备方法和应用

Release Time:2025-02-21 | Hits:

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202310696789.8

Number of Inventors:8

Service Invention or Not:No

Application Date:2023-06-13

Publication Date:2025-02-11

Authorization Date:2025-02-11