Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*
发布时间：2022-05-24 点击数：
所属单位：集成电路学院
论文名称：Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*
发表刊物：Chinese Physics B
第一作者：李睿
论文编号：33D1F97853C944DEA5FA257A4D20BB96
卷号：30
期号：4
字数：4000
是否译文：否
发表时间：2021-04