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Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode

发布时间：2025-03-04 点击数：

所属单位：新一代半导体材料研究院

论文名称：Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode

发表刊物：2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

第一作者：王新宇

论文编号：99EBB9F885AB4FE0A19772F7E975E724

是否译文：否

发表时间：2024-11

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徐明升 (教授)