The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices
发布时间：2025-05-16 点击数：
所属单位：新一代半导体材料研究院
论文名称：The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices
发表刊物：Physica Status Solidi A-Applications and Materials Science
第一作者：罗兰
论文编号：1906642867614052353
字数：8
是否译文：否
发表时间：2025-01