hSXnKrub5apSZP5sLfVreyHdu6YnmxeXemI5YiL9m91sPIwlHTdimD5ewqXX
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Home > Scientific Research > Paper Publications

Improved performance of InSe field-effect transistors by channel encapsulation

Release Time:2019-04-14 Hits:

Institution:微电子学院
Journal:Semiconductor Science and Technology
First Author:梁广大
All the Authors:Song A M,杨再兴,辛倩
Document Code:229D178CE76143EAB1DD3BF02D002873
Volume:33
Issue:6
Translation or Not:No
Date of Publication:2018-06

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