yangzaixing

Doctor

With Certificate of Graduation for Doctorate Study

Personal Information:

Gender:Male
Date of Employment:2016-10-25
E-Mail:zaixyang@sdu.edu.cn

VIEW MORE
Home > Scientific Research > Paper Publications

Improved performance of InSe field-effect transistors by channel encapsulation

Date of Publication:2018-06-01 Hits:

Affiliation of Author(s):微电子学院
Journal:Semiconductor Science and Technology
All the Authors:yangzaixing,xinqian,Song A M
First Author:梁广大
Indexed by:Unit Twenty Basic Research
Document Code:229D178CE76143EAB1DD3BF02D002873
Volume:33
Issue:6
Translation or Not:no
Date of Publication:2018-06-01

Pre One:Ambipolar SnOx thin-film transistors achieved at high sputtering power

Next One:Controllable III-V nanowire growth via catalyst epitaxy

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:  | The Last Update Time:..  | Login | SDU