yangzaixing

Doctor

With Certificate of Graduation for Doctorate Study

Personal Information:

Gender:Male
Date of Employment:2016-10-25
E-Mail:zaiXyang@sdu.edu.cn

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Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires

Date of Publication:2018-05-02 Hits:

Affiliation of Author(s):微电子学院
Journal:scientific reports
All the Authors:Song A M,yinyanxue
First Author:yangzaixing
Indexed by:Unit Twenty Basic Research
Document Code:D5BA3EB83706466D92951640EA0414B1
Translation or Not:no
Date of Publication:2018-05-02

Pre One:High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

Next One:III-V Nanowires: Synthesis, Property Manipulations, and Device Applications

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