r41AgkkwQyM9b88WqzAdQEZ4gS8mYbfHOndo5Y7D6eDJunPpCwH4nuG6OWhR
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Home > Scientific Research > Paper Publications

Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection

Release Time:2021-05-27 Hits:

Institution:物理学院
Journal:Nanotechnology
First Author:郭亚楠
Document Code:B7C57D2018A54150956241884F68D3B2
Volume:32
Issue:14
Number of Words:3500
Translation or Not:No
Date of Publication:2021-01

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