GXvVaNeYwu1UVCPmGeCb04zDk33UTcUYmuHSvLLhieuzUT4SX6PUnrLQIwBG
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Home > Scientific Research > Paper Publications

Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors

Release Time:2021-10-05 Hits:

Institution:物理学院
Journal:Small
First Author:孙嘉敏
Document Code:650F95C0277B4208AB705D37C078516E
Volume:17
Issue:37
Number of Words:5
Translation or Not:No
Date of Publication:2021-09

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