High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
Date of Publication:2023-01-11 Hits:
Affiliation of Author(s):物理学院
Journal:《PNAS》
Document Code:7E346485C6704AE0B2117ABF94A68071
Issue:120
Number of Words:8
Translation or Not:no
Date of Publication:2023-01-11