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High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction

Release Time:2023-05-25 Hits:

Institution:物理学院
Journal:《PNAS》
Document Code:7E346485C6704AE0B2117ABF94A68071
Issue:120
Number of Words:8
Translation or Not:No
Date of Publication:2023-01