yangzaixing

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Date of Employment:2016-10-25
E-Mail:zaixyang@sdu.edu.cn

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High Performance and Low Power Source-Gated Transistors Enabled by a Solution-Processed Metal Oxide Homojunction

Date of Publication:2023-01-17 Hits:

Affiliation of Author(s):物理学院
Journal:《Proc Natl Acad Sci U S A.》
First Author:庄昕明
Document Code:9FBE43051EA54322BBEE78FD371C4ECC
Issue:3
Number of Words:8000
Translation or Not:no
Date of Publication:2023-01-17

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