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Home > Scientific Research > Paper Publications

High Performance and Low Power Source-Gated Transistors Enabled by a Solution-Processed Metal Oxide Homojunction

Release Time:2023-12-07 Hits:

Institution:物理学院
Journal:《Proc Natl Acad Sci U S A.》
First Author:庄昕明
Document Code:9FBE43051EA54322BBEE78FD371C4ECC
Issue:3
Number of Words:8000
Translation or Not:No
Date of Publication:2023-01

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