Toward High Bias-Stress Stability P-Type GaSb Nanowire Field-Effect-Transistor for Gate-Controlled Near-Infrared Photodetection and Photocommunication
Date of Publication:2023-05-25 Hits:
Affiliation of Author(s):物理学院
Journal:Advanced functional materials
Document Code:314C533916B0444396DED0A623634621
Issue:2304064
Number of Words:4
Translation or Not:no
Date of Publication:2023-05-25