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Ge 掺杂碳化硅晶体的生长缺陷

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Institution:新一代半导体材料研究院

Title of Paper:Ge 掺杂碳化硅晶体的生长缺陷

Journal:《无机材料学报》

First Author:张福生

Document Code:6E4C9FC0B96542F08EE25AD1F7707406

Issue:11

Number of Words:2550

Translation or Not:No

Date of Publication:2016-11

Release Time:2021-12-09

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