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Institution:新一代半导体材料研究院
Title of Paper:Ge 掺杂碳化硅晶体的生长缺陷
Journal:《无机材料学报》
First Author:张福生
Document Code:6E4C9FC0B96542F08EE25AD1F7707406
Issue:11
Number of Words:2550
Translation or Not:No
Date of Publication:2016-11
Release Time:2021-12-09
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