location： Current position: Home >> Scientific Research >> Paper Publications

Ge 掺杂碳化硅晶体的生长缺陷

Hits:

Affiliation of Author(s):新一代半导体材料研究院

Journal:《无机材料学报》

First Author:张福生

Document Code:6E4C9FC0B96542F08EE25AD1F7707406

Issue:11

Number of Words:2550

Translation or Not:no

Date of Publication:2016-11-04

Pre One:无微管缺陷六英寸SiC 单晶的制备

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep