location： Current position: Home >> Scientific Research >> Paper Publications

无微管缺陷六英寸SiC 单晶的制备

Hits:

Affiliation of Author(s):新一代半导体材料研究院

Journal:硅酸盐学报

First Author:张福生

Document Code:8245878551654D7C9C9736E456888510

Issue:4

Number of Words:6455

Translation or Not:no

Date of Publication:2021-04-04

Pre One:Large-area Uniform Epitaxial Graphene on SiC by Optimizing Temperature Field

Next One:Ge 掺杂碳化硅晶体的生长缺陷

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep