OXqKHdnNUr4FzCn8dPO5nDeGK1ChgMerrgQxWAXoXgpehCYYOdl3JaHIA30w
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Large-area Uniform Epitaxial Graphene on SiC by Optimizing Temperature Field

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Institution:新一代半导体材料研究院

Title of Paper:Large-area Uniform Epitaxial Graphene on SiC by Optimizing Temperature Field

Journal:Wide Bandgap Semiconductors China (SSLChina: IFWS)

First Author:张福生

Document Code:B800B6E8670048DB85936A1F6778471F

Number of Words:2668

Translation or Not:No

Date of Publication:2016-10

Release Time:2021-12-09

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