Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing
Hits:
Institution:海洋研究院
Title of Paper:Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing
Journal:npj 2D Materials and Applications ,2019,29. 中科院 1区，top， IF：10.516
First Author:Jianfeng Jiang, Jingxin Li, Yutao Li, Jiazhzhi Duan, Linshen Li, Ye Tian, Zhihua Zong, Haotian Zheng, Xianjin Feng, Qiqiang Li, Hong Liu, Yu Zhang*, Tian-Ling Ren, Lin Han
Document Code:F5D34A56CA0D44EFBB3804A7F93C4249
Translation or Not:No
Date of Publication:2019-07
Release Time:2019-12-27